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Dual-Output Remote-Junction
Temperature Switches
ABSOLUTE MAXIMUM RATINGS
Voltages Referenced to GND
V DD, T LOW , T HIGH .....................................................-0.3V to +6V
DXN .......................................................................-0.3V to +0.8V
All Other Pins..............................................-0.3V to (V DD + 0.3V)
Input Current .........................................................................5mA
Output Current ....................................................................20mA
Continuous Power Dissipation (T A = +70 ° C)
8-Pin μMAX (derate 4.1mW/ ° C above +70 ° C) .............330mW
Operating Temperature Range .........................-40 ° C to +125 ° C
Junction Temperature ......................................................+150 ° C
Storage Temperature Range .............................-65 ° C to +165 ° C
Lead Temperature (soldering, 10s) .................................+300 ° C
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional
operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to
absolute maximum rating conditions for extended periods may affect device reliability.
ELECTRICAL CHARACTERISTICS
(V DD = 3.0V to 5.5V, T A = -40 ° C to +125 ° C, unless otherwise noted. Typical values are at V DD = 3.3V and T A = +25 ° C.) (Note 1)
PARAMETER
SYMBOL
CONDITION
MIN
TYP
MAX
UNITS
Power-Supply Range
Average Supply Current
Supply Current During
Conversion
V DD
I DD
3.0
200
400
5.5
500
800
V
μA
μA
Power-On Reset Threshold
POR
V DD falling edge
1.0
1.5
2.0
V
POR Threshold Hysteresis
50
mV
Temperature Threshold
Accuracy
? T TH
V DD = 3.3V, T A = +25 ° C, T RJ = 0 ° C to +125 ° C
(Note 2)
-1.5
+1.5
° C
T A = 0 ° C to +100 ° C, T RJ = 0 ° C to +125 ° C
2.0
Temperature Threshold
Hysteresis
Supply Sensitivity of Temperature
Threshold
T HYST
T A = +25 ° C, T RJ = 0 ° C to +125 ° C,
V DD = 3.0V to 5.5V
5.0
0.6
° C
° C/V
Output Voltage High
Output Voltage Low
Logic-Low Input Voltage
Logic-High Input Voltage
Input Current
Open-Drain Output Leakage
Current
V OH
V OL
V IL
V IH
I SOURCE = 1mA, MAX6685 T LOW only
I SINK = 1mA
S1, S2
S1, S2
S1, S2
V OUT = 5.5V, T LOW and T HIGH
V DD -
0.2
1.8
0.2
0.4
10
1
V
V
V
V
μA
μA
Conversion Time
Sample Period
0.09
0.35
0.11
0.45
0.13
0.55
s
s
Current Sourcing for External
Diode
High level
Low level
80
8
100
10
120
12
μA
Note 1: All parameters are tested at +25 ° C. Temperature specifications over a range of -40 ° C to +125 ° C are guaranteed by design.
Note 2: T RJ is the temperature of the remote-sensing diode junction.
2
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